Browsing by Author "Ozgur, U."
Now showing items 1-4 of 4
-
Growth kinetics of O-polar BexMgyZn1-x-yO alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature
Ullah, M. B.; Avrutin, V.; Nakagawara, T.; Hafiz, S.; Altuntas, I.; Ozgur, U.; Morkoc, H. (AMER INST PHYSICS, 2017)We studied the effect of the substrate temperature, in the range from 450 degrees C to 500 degrees C, on the required Zn to (Be + Mg) flux ratio for plasma-assisted molecular beam epitaxy growth of O-polar BexMgyZn1-x-yO ... -
InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors
Sheremet, V.; Gheshlaghi, N.; Sozen, M.; Elci, M.; Sheremet, N.; Aydinli, A.; Altuntas, I.; Ding, K.; Avrutin, V.; Ozgur, U.; Morkoc, H. (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2018)We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN ... -
The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes
Sheremet, V.; Genc, M.; Elci, M.; Sheremet, N.; Aydinli, A.; Altuntas, I.; Ding, K.; Avrutin, V.; Ozgur, U.; Morkoc, H. (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2017)The effect of a transparent ITO current spreading layer on electrical and light output properties of blue InGaN/GaN light emitting diodes (LEDs) is discussed. When finite conductivity of ITO is taken into account, unlike ... -
Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors
Sheremet, V.; Genc, M.; Gheshlaghi, N.; Elci, M.; Sheremet, N.; Aydinli, A.; Altuntas, I.; Ding, K.; Avrutin, V.; Ozgur, U.; Morkoc, H. (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2018)Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa ...